The paper presents details of the fabricating technology of nanoscale mechanical resonators based on suspended silicon nanowires. The structures were made from silicon on insulator material, the thickness of the upper layer of silicon is 110 nm, the thickness of silicon oxide is 200 nm. Fabrication process contains standard CMOS compatible technologies only: electron lithography with positive resist, reactive ion and liquid etching, electron beam deposition of thin films. The presented structures can be used as sensors of mass, displacement, acceleration, pressure with extremely high sensitivity.