| year |
2015 |
| author(s) |
A. Di Marco, V. Maisi, F.W.J. Hekking, J. Pekola |
| title |
Effect of photon-assisted Andreev reflection in the accuracy of a SINIS turnstile |
| document type |
Paper |
| source |
physical review b 92 9, 1-12 |
| doi |
10.1103/PhysRevB.92.094514
|
| EMP/Horizon2020 |
This publication does not include a EMP/Horizon2020 acknowledgement. |
| abstract |
We consider a hybrid single-electron transistor constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (SINIS), operated as a turnstile. We show that the exchange of photons between this system and the high-temperature electromagnetic environment where it is embedded enhances Andreev reflection, thereby limiting the single-electron tunneling accuracy. |
